BS170 Transistor

Detail Description:

-Transistor Type: N Channel

-Voltage Applied From Drain to Source: 60V(Maximum)

-Gate to Source Voltage Should Be: ±20V(Maximum)

-Continues Drain Current is: 500mA(Maximum)

-Pulsed Drain Current is: 500mA(Maximum)

-Power Dissipation is: 830mW(Maximum)

-Voltage Required to Conduct: 0.8V(Minimum)

-Storage & Operating temperature Should Be: -55 to +150 Celsius

-Low Offset and Error Voltage

-High-Density Cell Design to Minimize ON-state Resistance-RDS(ON)

-Voltage Controlled Small Signal Switch

-Fast Switching (TON = 4ns)

BS170 Transistor