BS170 Transistor
Detail Description:
-Transistor Type: N Channel
-Voltage Applied From Drain to Source: 60V(Maximum)
-Gate to Source Voltage Should Be: ±20V(Maximum)
-Continues Drain Current is: 500mA(Maximum)
-Pulsed Drain Current is: 500mA(Maximum)
-Power Dissipation is: 830mW(Maximum)
-Voltage Required to Conduct: 0.8V(Minimum)
-Storage & Operating temperature Should Be: -55 to +150 Celsius
-Low Offset and Error Voltage
-High-Density Cell Design to Minimize ON-state Resistance-RDS(ON)
-Voltage Controlled Small Signal Switch
-Fast Switching (TON = 4ns)